Advances in Infrared Photodetectors by Sarath D. Gunapala, David R. Rhiger and Chennupati Jagadish

By Sarath D. Gunapala, David R. Rhiger and Chennupati Jagadish (Eds.)

When you consider that its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has exclusive itself during the cautious number of famous authors, editors, and participants. The "Willardson and Beer" sequence, because it is well known, has succeeded in publishing various landmark volumes and chapters. not just did a lot of those volumes make an impression on the time in their book, yet they remain well-cited years after their unique liberate. lately, Professor Eicke R. Weber of the college of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a widely known professional within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely correct, and long-impacting volumes. the various contemporary volumes, equivalent to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this practice may be maintained or even elevated. Reflecting the actually interdisciplinary nature of the sector that the sequence covers, the volumes in Semiconductors and Semimetals were and may stay of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in glossy industry.Written and edited by way of across the world well known expertsRelevent to a large readership: physicists, chemists, fabrics scientists, and equipment engineers in academia, clinical laboratories and sleek undefined.

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As with all semiconductors, the band gap of InAs/GaSb superlattices changes with temperature. In addition to this bandgap variation, the temperature change affects other processes that shift the PL peak position. For bulk material, a continuous redshift of the PL peak position with increasing temperature is observed. However, in a InAs/GaSb superlattice blueshift of the PLpeak with increasing temperature in the 2–125 K temperature range was observed by Bertru et al. (1999). The explanation given by this group was that the joint density of states of type-II quantum wells (QWs) differs from bulk and also from type-I QW structures.

Further, the material needs to be nonconductive and does not contribute to the surface resistance. It can be seen that the resistance-area product has a linear relationship with the surface resistivity as given by the relation 1 P 1 1 + = , RA (RA)bulk rsurface A where (RA)bulk is the resistance-area product of the bulk material, rsurface is the surface resistivity, P is the perimeter of the diode, and A is the area of the diode. In addition to protecting the surface from chemical reactions, passivation can physically protect the surface from degradation and ensure stability of the device.

Several groups have used absorption spectroscopy to study interband transitions between higher energy levels in the superlattice. , 2005). The energy subband separations obtained in these experiments can be used to identify the possible Auger processes in the material. Near mid-gap energy levels are the main contributors to the SRH processes that limit the minority carrier lifetime. There were several attempts to measure these levels using optical techniques but so far they did not produce any conclusive results.

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